CYStech Electronics Corp.
Spec. No. : C081J3 Issued Date : 2016.02.25 Revised Date : Page No. : 1/11
N-Channel Enhance...
CYStech Electronics Corp.
Spec. No. : C081J3 Issued Date : 2016.02.25 Revised Date : Page No. : 1/11
N-Channel Enhancement Mode Power
MOSFET
MTN4N60CJ3 BVDSS ID @ VGS=10V, TC=25°C
RDSON(TYP) @ VGS=10V, ID=2A
Features
Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and halogen-free package
600V 4.0A 1.8Ω
Applications
Open Framed Power Supply Adapter STB
Symbol
MTN4N60CJ3
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device MTN4N60CJ3-0-T3-G
Package
TO-252 (Pb-free lead plating and halogen-free package)
Shipping 2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTN4N60CJ3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C081J3 Issued Date : 2016.02.25 Revised Date : Page No. : 2/11
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source
Voltage
Gate-Source
Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Pulsed Drain Current @ VGS=10V
(Note 1)
Avalanche Current
(Note 1)
Single Pulse Avalanche Energy @ L=1mH, IAS=4A, VDD=50V
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Op...
