CYStech Electronics Corp.
Spec. No. : C118I3 Issued Date : 2015.12.26 Revised Date : Page No. : 1/10
N-Channel Enhance...
CYStech Electronics Corp.
Spec. No. : C118I3 Issued Date : 2015.12.26 Revised Date : Page No. : 1/10
N-Channel Enhancement Mode Power
MOSFET
MTN3N60CI3
BVDSS ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=1.5A
600V 3A
3Ω(typ)
Features
Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package
Symbol
MTN3N60CI3
Outline
TO-251
G:Gate D:Drain S:Source
G DS
Ordering Information
Device MTN3N60CI3-0-UA-G
Package
TO-251 (RoHS compliant and halogen-free package)
Shipping 80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, UA : 80 pcs / tube, 50 tubes/box Product rank, zero for no rank products
Product name
MTN3N60CI3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C118I3 Issued Date : 2015.12.26 Revised Date : Page No. : 2/10
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source
Voltage
Gate-Source
Voltage
Continuous Drain Current @TC=25°C, VGS=10V
Continuous Drain Current @TC=100°C, VGS=10V
Pulsed Drain Current
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Single Pulse Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (TA=25℃)
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
Symbol
VDS VGS
ID
IDM EAS IAS EA...