MTN3N60CI3

CYStech Electronics Corp. Spec. No. : C118I3 Issued Date : 2015.12.26 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTN3N60CI3 BVDSS  ID@VGS=10V, TC=25°C  RDS(ON)@VGS=10V, ID=1.5A    600V  3A  3Ω(typ)  Features Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Symbol MTN3N60CI3 Outline TO-251 G：Gate D：Drain S：Source G DS Ordering Information Device MTN3N60CI3-0-UA-G Package TO-251 (RoHS compliant and halogen-free package) Shipping 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UA : 80 pcs / tube, 50 tubes/box Product rank, zero for no rank products Product name MTN3N60CI3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C118I3 Issued Date : 2015.12.26 Revised Date : Page No. : 2/10 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V Continuous Drain Current @TC=100°C, VGS=10V Pulsed Drain Current (Note 1) Single Pulse Avalanche Energy (Note 2) Single Pulse Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds Total Power Dissipation (TA=25℃) Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Symbol VDS VGS ID IDM EAS IAS EA...