CYStech Electronics Corp.
Spec. No. : C583N3 Issued Date : 2015.07.10 Revised Date : 2016.05.27 Page No. : 1/ 8
110V N...
CYStech Electronics Corp.
Spec. No. : C583N3 Issued Date : 2015.07.10 Revised Date : 2016.05.27 Page No. : 1/ 8
110V N-Channel Enhancement Mode
MOSFET
MTN2328AN3
Features
VDS=110V RDS(ON)(typ)=135mΩ@VGS=10V, ID=1.5A
Low on-resistance Low gate charge Excellent thermal and electrical capabilities Pb-free lead plating and halogen-free package
BVDSS ID@VGS=10V, TA=25°C RDSON(TYP)
110V 1.9A 135mΩ
Equivalent Circuit
MTN2328AN3
Outline
SOT-23 D
G:Gate S:Source D:Drain
GS
Ordering Information
Device MTN2328AN3-0-T1-G
Package
SOT-23 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products Product name
MTN2328AN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C583N3 Issued Date : 2015.07.10 Revised Date : 2016.05.27 Page No. : 2/ 8
Absolute Maximum Ratings (Ta=25°C)
Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current @ TA=25°C (Note 3) Continuous Drain Current @ TA=70°C (Note 3) Pulsed Drain Current (Note 1, 2) Maximum Power Dissipation @ TA=25℃
Linear Derating Factor
Thermal Resistance, Junction-to-Ambient (Note 3) Operating Junction and Storage Temperature
Symbol
VDS VGS
ID
IDM
PD
Rth,ja Tj, Tstg
Limits 110 ±20 1.9 1.5 10 1.38
0.01
90 -55~+150
Note : 1. Pulse width limited by maximum junctio...