MTN2310N3

CYStech Electronics Corp. 60V N-CHANNEL Enhancement Mode MOSFET MTN2310N3 Spec. No. : C393N3 Issued Date : 2007.10.24 Revised Date : Page No. : 1/6 Features VDS=60V RDS(ON)=90mΩ(max.)@VGS=10V, IDS=3A RDS(ON)=120mΩ(max.)@VGS=4.5V, IDS=2A Simple drive requirement Small package outline Symbol MTN2310N3 Outline SOT-23 D G：Gate S：Source D：Drain GS Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=4.5V, TA=25°C (Note 3) Continuous Drain Current @VGS=4.5V, TA=70°C (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation@ TA=25℃ Linear Derating Factor Operating Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD Tj Tstg Limits 60 ±20 3.0 2.3 10 1.38 0.01 -55~+150 -55~+150 Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad Unit V V A A A W W/°C °C °C MTN2310N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C393N3 Issued Date : 2007.10.24 Revised Date : Page No. : 2/6 Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient(PCB mounted) Symbol Rth,ja Limit 90 Note : Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad Unit °C/W Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS ∆BV...