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MTN2306AN3 Datasheet

Part Number MTN2306AN3
Manufacturers CYStech
Logo CYStech
Description N-Channel Enhancement Mode MOSFET
Datasheet MTN2306AN3 DatasheetMTN2306AN3 Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C429N3 Issued Date : 2008.08.14 Revised Date :2016.01.28 Page No. : 1/ 8 30V N-CHANNEL Enhancement Mode MOSFET MTN2306AN3 BVDSS ID@VGS=4.5V, TA=25°C RDSON@VGS=4.5V, ID=5A RDSON@VGS=2.5V, ID=2.6A 30V 5.5A 27mΩ(typ) 30mΩ(typ) Features • Low on-resistance • Low gate charge • Excellent thermal and electrical capabilities • Pb-free lead plating and halogen-free package Equivalent Circuit MTN2306AN3 Outline SOT-23 D G:Gate S:Source D:Drain GS Orderin.

  MTN2306AN3   MTN2306AN3






N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp. Spec. No. : C429N3 Issued Date : 2008.08.14 Revised Date :2016.01.28 Page No. : 1/ 8 30V N-CHANNEL Enhancement Mode MOSFET MTN2306AN3 BVDSS ID@VGS=4.5V, TA=25°C RDSON@VGS=4.5V, ID=5A RDSON@VGS=2.5V, ID=2.6A 30V 5.5A 27mΩ(typ) 30mΩ(typ) Features • Low on-resistance • Low gate charge • Excellent thermal and electrical capabilities • Pb-free lead plating and halogen-free package Equivalent Circuit MTN2306AN3 Outline SOT-23 D G:Gate S:Source D:Drain GS Ordering Information Device Package Shipping MTN2306AN3-0-T1-G SOT-23 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTN2306AN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C429N3 Issued Date : 2008.08.14 Revised Date :2016.01.28 Page No. : 2/ 8 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=4.5V (Note 3) Continuous Drain Current @ TA=70°C, VGS=4.5V (Note 3) Pulsed Drain Current (Note 1, 2) Maximum Power Dissipation @ TA=25℃ Linear Derating Factor Thermal Resistance, Junction-to-Ambient (Note 3) Operating Junction and Storage Temperature Symbol VDS VGS ID ID IDM PD Rth,ja Tj, Tstg Limits 30 ±12 5.5 4.4 30 1.38 0.01 90 -55~+150 Note : 1. Pulse widt.


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