CYStech Electronics Corp.
Spec. No. : C323N3 Issued Date : 2015.01.06 Revised Date : Page No. : 1/8
20V N-Channel Enhancement Mode MOSFET
MTN2300AN3 BVDSS ID@VGS=4.5V, TA=25°C
RDSON@VGS=4.5V, ID=3.6A
RDSON@VGS=2.5V, ID=3.1A
20V 3.6A 29mΩ(typ.) 39mΩ(typ.)
Features
• Simple drive requirement • Small package outline • Capable of 2.5V gate drive • Pb-free lead plating and halogen-free package
Symbol
MTN2300AN3
Outline
SOT-23 D
G:Gate S:Source D:Drain
GS
Ordering Information
Device MTN2300.
N-Channel Enhancement Mode MOSFET
CYStech Electronics Corp.
Spec. No. : C323N3 Issued Date : 2015.01.06 Revised Date : Page No. : 1/8
20V N-Channel Enhancement Mode MOSFET
MTN2300AN3 BVDSS ID@VGS=4.5V, TA=25°C
RDSON@VGS=4.5V, ID=3.6A
RDSON@VGS=2.5V, ID=3.1A
20V 3.6A 29mΩ(typ.) 39mΩ(typ.)
Features
• Simple drive requirement • Small package outline • Capable of 2.5V gate drive • Pb-free lead plating and halogen-free package
Symbol
MTN2300AN3
Outline
SOT-23 D
G:Gate S:Source D:Drain
GS
Ordering Information
Device MTN2300AN3-0-T1-G
Package
SOT-23 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products
Product name
MTN2300AN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C323N3 Issued Date : 2015.01.06 Revised Date : Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Drain Current @VGS=4.5V, TA=25°C (Note 3)
Continuous Drain Current @VGS=4.5V, TA=70°C (Note 3) Pulsed Drain Current (Notes 1, 2)
Maximum Power Dissipation@ TA=25℃ Linear Derating Factor
Operating Junction and Storage Temperature
Symbol VDS VGS
ID IDM PD
Tj, Tstg
Limits 20 ±12 3.6 2.9 10
1.38 (Note 3)
0.01 -55~+150
Unit V V A A A
W
W/°C °C
Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, d.