CYStech Electronics Corp.
Spec. No. : C095E3 Issued Date : 2016.03.18 Revised Date : Page No. : 1/8
N-Channel Enhancem...
CYStech Electronics Corp.
Spec. No. : C095E3 Issued Date : 2016.03.18 Revised Date : Page No. : 1/8
N-Channel Enhancement Mode Power
MOSFET
MTN18N50CE3 BVDSS ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=9A
500V 18A 211mΩ(typ)
Features
Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package
Applications
Power Factor Correction Flat Panel Power Full and Half Bridge Power Supplies Two-Transistor Forward Power Supplies
Symbol
MTN18N50CE3
Outline
TO-220
G：Gate D：Drain S：Source
GDS
Ordering Information
Device MTN18N50E3-0-UB-X
Package
TO-220 (RoHS compliant package)
Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton
MTN18N50CE3
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products Product name
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C095E3 Issued Date : 2016.03.18 Revised Date : Page No. : 2/8
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source
Voltage (Note 1)
Gate-Source
Voltage
Continuous Drain Current @TC=25°C, VGS=10V
Continuous Drain Current @TC=100°C, VGS=10V
Pulsed Drain Current @ VGS=10V (Note 2)
Single Pulse Avalanche Energy
(Note 4)
Avalanche Current
(Note 2)
Repetitive Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
(Note 3)
Maximum Temperature for Soldering @ Lead at 0.125 in(3.175mm) from ...
