CYStech Electronics Corp.
Spec. No. : C725FP Issued Date : 2009.06.15 Revised Date : 2011.08.15 Page No. : 1/10
N-Chan...
CYStech Electronics Corp.
Spec. No. : C725FP Issued Date : 2009.06.15 Revised Date : 2011.08.15 Page No. : 1/10
N-Channel Enhancement Mode Power
MOSFET
MTN10N65FPG
BVDSS : 650V RDS(ON) : 0.82Ω
ID : 10A
Description
The MTN10N65FPG is a N-channel enhancement-mode
MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220FP package is universally preferred for all commercial-industrial applications
Features
Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Insulating package, front/back side insulating
voltage=2500V(AC) Pb-free lead plating and halogen-free package
Applications
Power Factor Correction LCD TV Power Full and Half Bridge Power
Symbol
MTN10N65FPG
Outline
TO-220FP
G：Gate D：Drain S：Source
MTN10N65FPG
GDS
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C725FP Issued Date : 2009.06.15 Revised Date : 2011.08.15 Page No. : 2/10
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source
Voltage (Note 1) Gate-Source
Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 2) Single Pulse Avalanche Energy @ L=4.3mH, ID=10 Amps, VDD=50V Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 3) Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Tot...
