N-Channel Enhancement Mode Power MOSFET
Description
CYStech Electronics Corp.
Spec. No. : C966H8 Issued Date : 2015.03.23 Revised Date : Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTE130N20H8 BVDSS ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=9A
200V 11A 156 mΩ(typ)
Features
Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and ...
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