|
Part Number
|
MTD6P10E |
|
Manufacturer
|
ON Semiconductor |
|
Description
|
Power MOSFET |
|
Published
|
Jan 15, 2016 |
|
Datasheet
|
 MTD6P10E PDF File
|
Features
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Pb−Free Packages are Available
...
Similar Datasheet
MTD6P10E PDF File
