MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB52N06V/D
TMOS Power Field Effect Transisto...
MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB52N06V/D
TMOS Power Field Effect Transistor D2PAK for Surface Mount
TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard
MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low
voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected
voltage transients. New Features of TMOS V On–resistance Area Product about One–half that of Standard
MOSFETs with New Low
Voltage, Low RDS(on) Technology Faster Switching than E–FET Predecessors
™ Data Sheet V™
MTB52N06V
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.022 OHM
TM
D
G S CASE 418B–02, Style 2 D2PAK
Features Common to TMOS V and TMOS E–FETs Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperature Static Parameters are the Same for both TMOS V and TMOS E–FET Surface Mount Package Available in 16 mm 13–inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number MAXIMUM RATINGS (TC = 25°C unles...