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MTB3N60E

Motorola

TMOS POWER FET


Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N60E/D Product Preview TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–...



Motorola

MTB3N60E

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