MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB3N100E/D
™ Data Sheet TMOS E-FET.™ High Energy Power ...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB3N100E/D
™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount
Designer's
MTB3N100E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high
voltage MOSFET uses an advanced termination scheme to provide enhanced
voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected
voltage transients.
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM
®
D
G CASE 418B–02, Style 2 D2PAK S
Robust High
Voltage Termination Avalanche Energy Specified Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temp...