MTB36N06V

MTB36N06V Preferred Device Power MOSFET 32 Amps, 60 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperature MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 MΩ) Gate−to−Source Voltage − Continuous − Non−Repetitive (tp ≤ 50 μs) Drain Current − Continuous @ 25°C Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 μs) Total Power Dissipation @ 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1.) VDSS VDGR VGS VGSM ID ID IDM PD 60 Vdc 60 Vdc ± 20 ± 25 32 22.6 112 90 0.6 3.0 Vdc Vpk Adc Apk Watts W/°C Watts Operating and Storage Temperature Range TJ, Tstg − 55 to 175 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 32 Apk, L = 0.1 mH, RG = 25 Ω) EAS 205 mJ Thermal Resistance − Junction to Case − Junction to Ambient − Junction to Ambient (Note 1.) RθJC RθJA RθJA °C/W 1.67 62.5 50 Maximum Lead Temperature for Soldering Purposes, 1/...