MTB2N60E
Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET D2PAK for Surface Mount
N−Channel Enhancement−Mode S...
MTB2N60E
Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET D2PAK for Surface Mount
N−Channel Enhancement−Mode Silicon Gate
http://onsemi.com
This high
voltage MOSFET uses an advanced termination scheme to provide enhanced
voltage−blocking capability without degrading performance over time. In addition, this advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected
voltage transients.
Robust High
Voltage Termination
Avalanche Energy Specified Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
TMOS POWER FET 2.0 AMPERES, 600 VOLTS
RDS(on) = 3.8 W
CASE 418B−02, Style 2 D2PAK
D
®G
S
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source
Voltage
VDSS 600 Vdc
Drain−to−Gate
Voltage (RGS = 1.0 MΩ)
VDGR 600 Vdc
Gate−to−Source
Voltage — Continuous — Non−Repetitive (tp ≤ 10 ms)
VGS VGSM
± 20 ± 40
Vdc Vpk
Drain Current — Continuous — Continuous @ 100°C — Sing...