MTA050P01S3

CYStech Electronics Corp. Spec. No. : C101S3 Issued Date : 2016.06.07 Revised Date : Page No. : 1/9 -14V P-Channel Enhancement Mode MOSFET MTA050P01S3 BVDSS ID @ VGS=-10V, TA=25°C RDSON@VGS=-4.5V, ID=-1.7A RDSON@VGS=-2.5V, ID=-1.7A Features Low gate charge Compact and low profile SOT-323 package RDSON@VGS=-1.8V, ID=-1A RDSON@VGS=-1.5V, ID=-1A Advanced trench process technology High density cell design for ultra low on resistance Pb-free lead plating package -14V -1.7A 66mΩ(typ) 86mΩ(typ) 121mΩ(typ) 181mΩ(typ) Symbol MTA050P01S3 Outline SOT-323 D G：Gate S：Source D：Drain GS Ordering Information Device MTA050P01S3-0-T1-G Package SOT-323 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name MTA050P01S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C101S3 Issued Date : 2016.06.07 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=-4.5V (Note 3) Continuous Drain Current @ TA=70°C, VGS=-4.5V (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation (Note 3) Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD Tj ; Tstg Limits -14 ±8 -1.7 -1.4 -6.8 ...