MTA040P02KN3

CYStech Electronics Corp. Spec. No. : C064N3 Issued Date : 2016.08.16 Revised Date : Page No. : 1/9 -20V P-Channel Enhancement Mode MOSFET MTA040P02KN3 BVDSS ID @ VGS=-4.5V, TA=25°C RDSON@VGS=-4.5V, ID=-4A RDSON@VGS=-2.5V,ID=-4A RDSON@VGS=-1.8V,ID=-2A Features For load switch application only Compact and low profile SOT-23 package Advanced trench process technology High density cell design for ultra low on resistance ESD protected gate Pb-free lead plating package -20V -4.3A 37.5mΩ(typ) 52.4mΩ(typ) 76.6mΩ(typ) Symbol MTA040P02KN3 Outline SOT-23 D G：Gate S：Source D：Drain S G Ordering Information Device MTA040P02KN3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name MTA040P02KN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C064N3 Issued Date : 2016.08.16 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C , VGS=-4.5V (Note 4) Continuous Drain Current @ TA=70°C, VGS=-4.5V (Note 4) Pulsed Drain Current (Notes 1, 2) ESD susceptibility (Note 3) Maximum Power Dissipation (Note 4) Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM V...