MTA025P01SN3

CYStech Electronics Corp. Spec. No. : C089N3 Issued Date : 2015.11.09 Revised Date : Page No. : 1/9 -14V P-Channel Enhancement Mode MOSFET MTA025P01SN3 BVDSS ID @ VGS=-4.5V, TA=25°C RDSON@VGS=-4.5V, ID=-4A RDSON@VGS=-2.5V,ID=-4A RDSON@VGS=-1.8V,ID=-2A Features Low gate charge Compact and low profile SOT-23 package Advanced trench process technology High density cell design for ultra low on resistance Pb-free lead plating package -14V -5.6A 25.5mΩ(typ) 35.5mΩ(typ) 52.0mΩ(typ) Symbol MTA025P01SN3 Outline SOT-23 D G：Gate S：Source D：Drain GS Ordering Information Device MTA025P01SN3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name MTA025P01SN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C089N3 Issued Date : 2015.11.09 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C , VGS=-10V (Note 3) Continuous Drain Current @ TA=70°C, VGS=-10V (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation (Note 3) Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD Tj ; Tstg Limits -14 ±12 -5.6 -4.5 -35 1.38 0.01 -55~+150 Unit V ...