CYStech Electronics Corp.
Spec. No. : C089V8 Issued Date : 2016.03.18 Revised Date : Page No. : 1/9
Dual P-Channel Enh...
CYStech Electronics Corp.
Spec. No. : C089V8 Issued Date : 2016.03.18 Revised Date : Page No. : 1/9
Dual P-Channel Enhancement Mode
MOSFET
MTA025B01V8
BVDSS ID@VGS=-4.5V, TA=25°C
ID@VGS=-4.5V, TC=25°C
VGS=-4.5V, ID=-4.5A
RDSON(TYP) VGS=-2.5V, ID=-2.2A
VGS=-1.8V, ID=-2.2A
Features
Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating and halogen-free package
P-CH -14V -5.0A -7.1A
22.8mΩ
30.7mΩ
49.0mΩ
Equivalent Circuit
MTA025B01V8
Outline
DFN3×3
G：Gate S：Source D：Drain
Pin 1
Ordering Information
Device
MTA025B01V8-0-T6-G
Package
DFN3×3 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products Product name
MTA025B01V8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Breakdown
Voltage
BVDSS
Gate-Source
Voltage
VGS
Continuous Drain Current *2 TA=25 °C, VGS=-4.5V TA=70 °C, VGS=-4.5V
IDSM
Continuous Drain Current
TC=25 °C, VGS=-4.5V TC=70 °C, VGS=-4.5V
ID
Pulsed Drain Current * 1
IDM
TA=25°C, Single device operation
Total Power Dissipation
TA=70°C, Single device operation TA=25°C, Single device value at dual operation TA=70°C, Single device value at dual operation
PDSM
TC=25°C TC=100°C
PD
O...
