MTA020N01SN3

CYStech Electronics Corp. Spec. No. : C073N3 Issued Date : 2016.01.15 Revised Date : 2016.03.28 Page No. : 1/9 14V N-Channel Enhancement Mode MOSFET MTA020N01SN3 BVDSS ID@VGS=4.5V, TA=25°C RDSON@VGS=4.5V, ID=5A RDSON@VGS=2.5V, ID=4.6A 14V 6.4A 17.9mΩ(typ) 25.3mΩ(typ) Features Simple drive requirement Small package outline Pb-free lead plating and halogen-free package Symbol MTA020N01SN3 Outline SOT-23 D G：Gate S：Source D：Drain S G Ordering Information Device Package Shipping MTA020N01SN3-0-T1-G SOT-23 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTA020N01SN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C073N3 Issued Date : 2016.01.15 Revised Date : 2016.03.28 Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current @ TA=25°C, VGS=4.5V (Note 3) Continuous Drain Current @ TA=70°C, VGS=4.5V (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation@ TA=25℃ (Note 3) Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD Tj ; Tstg Limits 14 ±8 6.4 5.1 40 1.38 0.01 -55~+150 Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%....