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MT9HVF6472PK Datasheet

Part Number MT9HVF6472PK
Manufacturers Micron
Logo Micron
Description 512MB DDR2 SDRAM VLP Mini-RDIMM
Datasheet MT9HVF6472PK DatasheetMT9HVF6472PK Datasheet (PDF)

512MB, 1GB: (x72, ECC, SR) 244-Pin DDR2 VLP Mini-RDIMM Features DDR2 SDRAM VLP Mini-RDIMM MT9HVF6472(P)K – 512MB MT9HVF12872(P)K – 1GB For component data sheets, refer to Micron’s Web site: www.micron.com Features • 244-pin, very low profile mini registered dual in-line memory module (VLP Mini-RDIMM) • Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • 512MB (64 Meg x 72) or 1GB (128 Meg x 72) • Supports ECC error detection and correction • VDD = VDDQ = +1.8V • VDDSPD = +1.7V.

  MT9HVF6472PK   MT9HVF6472PK






Part Number MT9HVF6472PZ
Manufacturers Micron
Logo Micron
Description DDR2 SDRAM VLP RDIMM
Datasheet MT9HVF6472PK DatasheetMT9HVF6472PZ Datasheet (PDF)

512MB, 1GB (x72, ECC, SR) 240-Pin DDR2 SDRAM VLP RDIMM Features DDR2 SDRAM VLP RDIMM MT9HVF6472PZ – 512MB MT9HVF12872PZ – 1GB Features • 240-pin, registered very low profile, dual in-line memory module, ATCA form factor • Fast data transfer rates: PC2-6400, PC2-5300, PC2-4200, or PC2-3200 • 512MB (64 Meg x 72), 1GB (128 Meg x 72) • Supports ECC error detection and correction • VDD = VDDQ = 1.8V • VDDSPD = 1.7–3.6V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, D.

  MT9HVF6472PK   MT9HVF6472PK







512MB DDR2 SDRAM VLP Mini-RDIMM

512MB, 1GB: (x72, ECC, SR) 244-Pin DDR2 VLP Mini-RDIMM Features DDR2 SDRAM VLP Mini-RDIMM MT9HVF6472(P)K – 512MB MT9HVF12872(P)K – 1GB For component data sheets, refer to Micron’s Web site: www.micron.com Features • 244-pin, very low profile mini registered dual in-line memory module (VLP Mini-RDIMM) • Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • 512MB (64 Meg x 72) or 1GB (128 Meg x 72) • Supports ECC error detection and correction • VDD = VDDQ = +1.8V • VDDSPD = +1.7V to +3.6V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Multiple internal device banks for concurrent operation • Supports duplicate output strobe (RDQS/RDQS#) • Programmable CAS# latency (CL) • Posted CAS# additive latency (AL) • WRITE latency = READ latency - 1 tCK • Programmable burst lengths: 4 or 8 • Adjustable data-output drive strength • 64ms, 8,192-cycle refresh • On-.


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