MT9926

Mos-Tech Semiconductor Co.,LTD. MT9926 N-Channel Enhancement Mode Field Effect Transistor FEATURES ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● SOP-8 package NOTE：The MT9926 is available in a lead-free package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 20V 6A 22 @ VGS=4.5V 35 @ VGS=2.5V D1 D2 G1 S1 G2 S2 ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted） Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125℃ Symbol VDS VGS ID Limit 20 ±12 6 - Pulse d b IDM 20 Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range IS PD TJ,TSTG 1.7 2.5 -55 to 150 Unit V V A A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance, Junction-to Ambientª Rth JA 80 ℃/W ©2005 Mos-Tech Semiconductor 1 http//www.mtsemi.com Mos-Tech Semiconductor Co.,LTD...