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MT58L512Y36D Datasheet

Part Number MT58L512Y36D
Manufacturers Micron Technology
Logo Micron Technology
Description (MT58xxxx) 16Mb SYNCBURST SRAM
Datasheet MT58L512Y36D DatasheetMT58L512Y36D Datasheet (PDF)

ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, DCD SYNCBURST SRAM 16Mb SYNCBURST™ SRAM FEATURES • Fast clock and OE# access times • Single +3.3V ±0.165Vor 2.5V ±0.125V power supply (VDD) • Separate +3.3V or 2.5V isolated output buffer supply (VDDQ) • SNOOZE MODE for reduced-power standby • Common data inputs and data outputs • Individual BYTE WRITE control and GLOBAL WRITE • Three chip enables for simple depth expansion and address pipelining • Clock-controlled and registered addresses, dat.

  MT58L512Y36D   MT58L512Y36D






(MT58xxxx) 16Mb SYNCBURST SRAM

ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, DCD SYNCBURST SRAM 16Mb SYNCBURST™ SRAM FEATURES • Fast clock and OE# access times • Single +3.3V ±0.165Vor 2.5V ±0.125V power supply (VDD) • Separate +3.3V or 2.5V isolated output buffer supply (VDDQ) • SNOOZE MODE for reduced-power standby • Common data inputs and data outputs • Individual BYTE WRITE control and GLOBAL WRITE • Three chip enables for simple depth expansion and address pipelining • Clock-controlled and registered addresses, data I/Os and control signals • Internally self-timed WRITE cycle • Burst control (interleaved or linear burst) • Automatic power-down • 100-pin TQFP package • 165-pin FBGA package • Low capacitive bus loading • x18, x32, and x36 versions available MT58L1MY18D, MT58V1MV18D, MT58L512Y32D, MT58V512V32D, MT58L512Y36D, MT58V512V36D 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Double-Cycle Deselect 100-Pin TQFP1 165-Pin FBGA (Preliminary Package Data) OPTIONS • Timing (Access/Cycle/MHz) 3.5ns/6ns/166 MHz 4.0ns/7.5ns/133 MHz 5ns/10ns/100 MHz • Configurations 3.3V VDD, 3.3V or 2.5V I/O 1 Meg x 18 512K x 32 512K x 36 2.5V VDD, 2.5V I/O 1 Meg x 18 512K x 32 512K x 36 TQFP MARKING* -6 -7.5 -10 NOTE: 1. JEDEC-standard MS-026 BHA (LQFP). MT58L1MY18D MT58L512Y32D MT58L512Y36D MT58V1MV18D MT58V512V32D MT58V512V36D T F None GENERAL DESCRIPTION The Micron® SyncBurst™ SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. Micron’s 16.


2006-01-04 : K2185    DS1217A    DS1215    DS1213D    DS1213C    DS1213B    DS1212    DS1211    XR2201    XR2202   


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