MOS-TECH Semiconductor Co.,LTD
MT4976
60V Complementary Power MOSFET
General Description
This complementary MOSFET device is produced using Mos-tech’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Applications
• DC/DC converter • Power management • LCD backlight inverter
Features
• Q1: N-Channel 4.5 A, 60 V RDS(on) = 40 mΩ @ VGS = 10V RDS(on) = 45 mΩ @ VGS = 4.5V
• Q2: P-Ch.
MOSFET
MOS-TECH Semiconductor Co.,LTD
MT4976
60V Complementary Power MOSFET
General Description
This complementary MOSFET device is produced using Mos-tech’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Applications
• DC/DC converter • Power management • LCD backlight inverter
Features
• Q1: N-Channel 4.5 A, 60 V RDS(on) = 40 mΩ @ VGS = 10V RDS(on) = 45 mΩ @ VGS = 4.5V
• Q2: P-Channel –3.5 A, –60 V RDS(on) = 70 mΩ @ VGS = –10V RDS(on) = 81 mΩ @ VGS = –4.5V
• RoHS Compliant
DD1DD2DD2 DD1
SO-8
Pin 1 SO-8
SS1GS1SS2GG2
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS VGSS ID PD
TJ, TSTG
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous
- Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a)
(Note 1a) (Note 1b) (Note 1c)
Operating and Storage Junct.