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MT45W2MW16B
(MT45W2MW16B / MT45W4MW16B) Burst Cellularram Memory
Description
www.DataSheet4U.com ADVANCE‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM Features Single device supports asynchronous, page, and burst operations VCC, VCCQ
Voltage
s 1.70V–1.95V VCC 1.70V–2.25V VCCQ (Option W) Random Access Time: 70ns Burst Mode Write Access Continuous burst Burst Mode Read Access 4, 8, or 16 wo...
Micron Semiconductor
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