MT3407

MOS-TECH Semiconductor Co.,LTD P-Channel Enhancement Mode Field Effect Transistor MT3407 Product Summary VDS= -30V ID= -4.1A (VGS= -10V) ≦ ΩRDS(ON) 60m @VGS= -10V ≦ ΩRDS(ON) 95m @VGS= -4.5V Applications： ▪ Power Management in Notebook Computer ▪ Portable Equipment and Battery Powered Systems. Features Advanced Trench Process Technology. High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. RoHS Compliant. ℃Absolute Maximum Ratings (TA = 25 unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS ID IDM IS PD TJ, TSTG Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Maximum Power Dissipation 1 Operating Junction and Storage Temperature Range Notes: ≦1. Surface Mounted on 1” x 1” FR4 Board, t 10 Sec. 2. Pulse width limited by maximum junction temperature. Rev2.0 May-2-2013 Steady State -30 ±20 -4.1 -20 -2 1.25 ...