MOS-TECH Semiconductor Co.,LTD
P-Channel Enhancement Mode Field Effect Transistor
MT3407
Product Summary
VDS= -30V ID...
MOS-TECH Semiconductor Co.,LTD
P-Channel Enhancement Mode Field Effect Transistor
MT3407
Product Summary
VDS= -30V ID= -4.1A (VGS= -10V)
≦ ΩRDS(ON) 60m @VGS= -10V ≦ ΩRDS(ON) 95m @VGS= -4.5V
Applications:
▪ Power Management in Notebook Computer ▪ Portable Equipment and Battery Powered Systems.
Features
Advanced Trench Process Technology. High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. RoHS Compliant.
℃Absolute Maximum Ratings (TA = 25 unless otherwise noted)
Symbol
Parameter
VDS Drain-Source
Voltage
VGS ID IDM IS PD
TJ, TSTG
Gate-Source
Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Maximum Power Dissipation 1 Operating Junction and Storage Temperature Range
Notes:
≦1. Surface Mounted on 1” x 1” FR4 Board, t 10 Sec.
2. Pulse width limited by maximum junction temperature.
Rev2.0 May-2-2013
Steady State
-30 ±20 -4.1 -20 -2 1.25 ...