MT3275

MOS-TECH Semiconductor Co.,LTD MT3275 N-Channel Power MOSFET 75V, 200A, 3mΩ Features RDS(on) = 3mΩ ( Typ.)@ VGS = 10V, ID = 75A Fast switching speed Low gate charge High performance trench technology for extremely low RDS(on) High power and current handling capability RoHS compliant Description This N-Channel MOSFET is produced using mos-tech Semiconductor’s adcanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application DC to DC convertors / Synchronous Rectification D GDS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous Continuous (TC (TC = = 25oC, 100oC, Silicon Silicon Limited) Limited) - Continuous (TC = 25oC, Package Limited) Drain Current - Pulsed (Note 1) Single Pulsed Avalanche Energy ...