MT3207

MOS-TECH Semiconductor Co.,LTD MT3207 N-Channel MOSFET 60V, 70A, 9mΩ Features RDS(on) = 8.5mΩ ( Typ.)@ VGS = 10V, ID = 40A Low gate charge(Typ. 57nC) Low Crss(Typ. 145pF) Fast switching Improved dv/dt capability RoHS compliant Description These N-Channel enhancement mode power field effect transistors are produced using Mos-tech’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies,active power factor correction, electronic lamp ballast based on half bridge topology. D G DS TO-220 G MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current -Continuous (...