MT3206A

MT3206A MOS-TECH Semiconductor Co.,LTD MT3206A 60V N-Channel MOSFET QFET TM General Description These N-Channel enhancem ent m ode power field effect transistors ar e produced using Mos-tech’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially t ailored to minimize on-st ate resist ance, provide superior swit ching performance, and wit hstand high energy pulse in t he avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC conver ters, and high ef ficiency swit ching f or power management in portable and battery operated products. Features 50A, 60V, RDS(on) = 11.2mΩ @VGS = 10 V Low gate charge ( typical 43 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating GDS TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv...