MT301

Mos-Tech Semiconductor Co.,LTD. P-Channel Enhancement Mode Field Effect Transistor MT301 FEATURES ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● TO-252-5L package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ -30V -30A 28@ VGS=-10V 35 @ VGS=-4.5V NOTE：The MT301 is available in a lead-free package S1 S2 G1 G2 D1 D2 ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted） Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125℃ Symbol VDS VGS ID Limit -30 ±20 -30 - Pulse d b IDM -125 Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range IS PD TJ,TSTG -17 120 -55 to 175 Unit V V A A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance, Junction-to Ambientª Rth JA 100 ℃/W ©2007 Mos-Tech Semiconductor 1 http//www.mtsemi.com Mos-Tech Semiconducto...