MT28F160C34

www.DataSheet4U.com ADVANCE‡ 1 MEG x 16 3V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY FEATURES MT28F160C34 Thirty-nine erase blocks: BALL ASSIGNMENT (Top View) Eight 4K-word parameter blocks 46-Ball FBGA Thirty-one 32K-word main memory blocks VCC, VCCQ and VPP voltages: 3.3V ±5% VCC 3.3V ±5% VCCQ 1.65V–3.465V and 12V VPP 1 2 3 4 5 6 7 8 Address access times: WP# A13 V A19 A4 A8 A11 A7 A 90ns at 3.3V ±5% Low power consumption: A18 A14 A17 A2 WE# RP# A10 A5 B Standby and deep power-down mode < 1µA (typical ICC) A15 A6 A1 A9 A12 A3 C Automatic power saving feature (APS mode) Enhanced WRITE/ERASE SUSPEND (1µs typical) DQ2 A16 DQ8 A0 DQ5 DQ14 CE# D DQ11 128-bit OTP area for security purposes Industry-standard command set compatibility DQ3 V Q DQ9 V DQ6 DQ15 DQ0 E DQ12 DataSheet4U.com Software/hardware block protection PP CC SS DataShee OPTIONS Timing 90ns access Boot Block Starting Address Top (FFFFFh) Bottom (00000h) Package 46-ball FBGA (6 x 8 ball grid) Temperature Range Extended (-40ºC to +85ºC) Part Number Example: NUMBER -9 T B FD ET F VSS DQ7 DQ13 DQ4 VCC DQ10 DQ1 OE# (Ball Down) NOTE: See page 3 for Ball Description Table. See last page for mechanical drawing. MT28F160C34FD-9 TET GENERAL DESCRIPTION The MT28F160C34 is a nonvolatile, electrically blockerasable (flash), programmable memory containing 16,777,216 bits organized as 1,048,576 words (16 bits). The MT28F160C34 is manufactured on 0.22µm process technology in a 46-bal...