Mos-Tech Semiconductor Co.,LTD.
N-Channel Enhancement Mode Field Effect Transistor
MT2312
FEATURES
● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● SOT-23 package
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
20V 4.5A
30@ VGS=4.5V 50@ VGS=2.5V
NOTE：The MT2312 is available in a lead-free package
D
S G
D
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