Mos-Tech Semiconductor Co.,LTD.
P-Channel Enhancement Mode Field Effect Transistor
MT2305
FEATURES
● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● SOT-23 package
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
-20V
-4.6A
85@ VGS=-4.5V 105 @ VGS=-2.5V
NOTE：The MT2305 is available in a lead-free package
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