MSM5718C50

E2G1059-39-21 ¡ Semiconductor MSM5718C50/MD5764802 ¡ Semiconductor 18Mb (2M ¥ 9) & 64Mb (8M ¥ 8) Concurrent RDRAM This version: Feb. 1999 MSM5718C50/MD5764802 Previous version: Nov. 1998 DESCRIPTION The 18/64-Megabit Concurrent Rambus™ DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs organized as 2M or 8M words by 8 or 9 bits. They are capable of bursting unlimited lengths of data at 1.67 ns per byte (13.3 ns per eight bytes). The use of Rambus Signaling Level (RSL) technology permits 600 MHz transfer rates while using conventional system and board design methodologies. Low effective latency is attained by operating the two or four 2KB sense amplifiers as high speed caches, and by using random access mode (page mode) to facilitate large block transfers. Concurrent (simultaneous) bank operations permit high effective bandwidth using interleaved transactions. RDRAMs are general purpose high-performance memory devices suitable for use in a broad range of applications including PC and consumer main memory, graphics, video, and any other application where high-performance at low cost is required. FEATURES Compatible with Base RDRAMs 600 MB/s peak transfer rate per RDRAM Rambus Signaling Level (RSL) interface Synchronous, concurrent protocol for block-oriented, interleaved (overlapped) transfers 480 MB/s effective bandwidth for random 32 byte transfers from one RDRAM 13 active signals require just 32 total pins on the controller interface (including power) 3.3 V...