MSM30N03G

MSM30N03G Chip Integration Technology Corporation N-Channel ENHANCEMENT MODE POWER MOSFET Features: □ Low On-Resistance □ Low Input Capacitance □ Green Device Available 「 Low Miller Charge 「 100% EAS and 100% Rg Guaranteed Package Dimensions Package Dimensions Description: The MSM30N03G uses advanced Trench technology and designs to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. The MSM30N03G meet the RoHS and Green Product requirement, 100% EAS and 100% Rg guaranteed with full function reliability approved. BVDSS RDS(ON) ID 30V 6mΩ 40A3 Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Continuous Drain Current3 Total Power Dissipation VDS VGS ID @TA=25℃ ID @TA=70℃ IDM ID @TC=25℃ ID @TC=70℃ PD @TC=25℃ PD @TA=25℃ Single Pulse Avalanche Energy, L=0.1mH Single Pulse Avalanche Current, L=...