MSM14Q

www.DataSheet4U.com DATA SHEET O K I A S I C P R O D U C T S MSM13Q/14Q000 0.35 µm Sea of Gates Arrays November 1999 s s ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Oki Semiconductor MSM13Q0000/14Q0000 0.35 µm Sea of Gates Arrays DESCRIPTION Oki’s 0.3 5 µm ASIC products deliver ultra-high performance and high density at low power dissipation. The MSM13Q0000/14Q0000 series devices (referred to as “MSM13Q/14Q”) are implemented with the industry-standard Cell-Based Array (CBA) architecture in a Sea-of-Gates (SOG) structure. Built in a 0.35 µm drawn CMOS technology (with an L-Effective of 0.27 µm), these SOG devices are available in three layers (MSM13Q) and four layers (MSM14Q) of metal. The semiconductor process is adapted from Oki’s production-proven 64-Mbit DRAM manufacturing process. The MSM13Q/14Q Series contains 6 arrays each, offering over 1 million raw gates and 352 I/O pads. Up to 66% and 90% of the raw gates can be used for the 3-layer and 4-layer arrays, respectively. Oki’s 0.35 µm family is optimized for 3-V core operation with optimized 3-V I/O buffers and 5-V tolerant 3-V buffers. These SOG products are designed to fit the most popular plastic quad flat packs (QFPs), thin QFPs (TQFPs) , and plastic ball grid array (PBGA) packages. The MSM13Q/14Q Series uses the popular CBA architecture from Silicon Architects of Synopsys which mixes two types of cells (8-transistor compute cells and 4-transistor drive cells) on t...