■ Main Product Characteristics
VDS RDS(on),typ RDS(on),typ ID
VGS=10V VGS=4.5V
100V 9.5mΩ 11.5mΩ
12A
■ Features
• Hi...
■ Main Product Characteristics
VDS RDS(on),typ RDS(on),typ ID
VGS=10V VGS=4.5V
100V 9.5mΩ 11.5mΩ
12A
■ Features
High speed power switching, logic level Enhanced body diode dv/dt capability Enhanced avalanche ruggedness 100% UIS tested, 100% Rg tested Lead free, halogen free
■ Application
Synchronous rectification in SMPS Hard switching and high speed circuit DC/DC in telecoms and industrial
MSL120N10G
N-Channel Enhancement Mode
MOSFET
■ Pin Description
2 2
2 2
3 3
1 3
Preliminary
■ Absolute Maximum Ratings (TJ = 25OC unless otherwise specified)
PARAMETER
CONDITIONS
Continuous Drain Current (silicon limited)
TC = 25OC TC = 100OC
Drain to Source
Voltage
Gate to Source
Voltage
Pulsed Drain Current Avalanche Energy, single pulse Power dissipation Operating and Storage Temperature Range
L=0.1mH, TC = 25OC TC = 25OC
■ Absolute Maximum Ratings
PARAMETER Thermal resistance junction-lead
Thermal Resistance-Junction to Ambient
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