MSL049P03G
P-Channel Enhancement Mode MOSFET
■ Features
• -30V/-23.8A RDS(ON) = 4.9mΩ (max.) @ VGS= -10V RDS(ON) = 8.2m...
MSL049P03G
P-Channel Enhancement Mode
MOSFET
■ Features
-30V/-23.8A RDS(ON) = 4.9mΩ (max.) @ VGS= -10V RDS(ON) = 8.2mΩ (max.) @ VGS= -4.5V
Super high dense cell design Reliable and Rugged. Lead free and green device available
(RoHS compliant). HBM ESD protection level pass 8KV.
Note: The diode connected between the gate and source serves only as protection against ESD. No gate over
voltage rating is implied.
■ Application
Power management in notebook computer portable equipment and battery powered system.
■ Pin Description DDDD
Top View of SOP-8
( 5,6,7,8 ) D D DD
SSSG
(4) G
SSS (1, 2, 3)
P- Channel
MOSFET
■ Absolute Maximum Ratings (TA = 25OC unless otherwise specified)
PARAMETER
CONDITIONS
Drain-Source
Voltage
Pulsed Drain Current(Note:1) Gate-Source
Voltage
VGS =-10V
Diode Continuous Forward Current(Note:1)
Avalanche Current, single pulse (Note:2)
L=0.5mH L=1mH
Avalanche Energy, single pulse (Note:2)
L=0.5mH L=1mH
Thermal Resistance...