MSG061P03G

MSG061P03G P-Channel Enhancement Mode MOSFET ■ Features -30V/-40A RDS(ON) = 6.1mΩ (max.) @ VGS= -10V RDS(ON) = 11mΩ (max.) @ VGS= -4.5V HBM ESD protection level pass 8KV. 100% UIS+Rg tested. Reliable and Rugged. Lead free and green device available (RoHS compliant). Note: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ■ Application Power management in notebook computer portable equipment and battery powered system. ■ Pin Description DDDD SS SG PIN 1 DFN3.3x3.3-8(Saw-EP) ( 5,6,7,8 ) D D DD (4) G ■ Absolute Maximum Ratings (TA = 25OC unless otherwise specified) PARAMETER CONDITIONS Drain-Source Voltage Continuous Drain Current(Note:2) Pulsed Drain Current(Note:2) Gate-Source Voltage TC = 25OC TC = 100OC TC = 25OC Diode Continuous Forward Current(Note:2) Avalanche Current, single pulse (Note:1) TC = 25OC L=0.5mH Avalanche Energy, single pulse (Note:1) L=0.5mH ...