MSD601

MSD601 NPN General Purpose Transistors P b Lead(Pb)-Free 1 2 3 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Total Device Dissipation TA=25°C Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC IC(P) PD Tj Tstg Value 50 60 7.0 100 200 0.2 +150 -55 to +150 Unit V V V mA mA mW °C °C WEITRON http://www.weitron.com.tw 1/6 18-Sep-06 MSD601 ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage IC = 2.0mA, IE = 0A Collector-Base Breakdown Voltage IC = 10µA, IB = 0A Emitter-Base Breakdown Voltage IE= 10µA, I C=0 Collector Cutoff Current VCB = 45V, I C = 0A Emitter Cutoff Current VEB = 10V, I C = 0A Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO Min 50 60 Typ - Max - Unit V V 7.0 - - 0.1 0.1 V µA µA ON CHARACTERISTICS Collector-Emitter Saturation Voltage IC = 100mA, I B = 10mA DC Current Transfer Ration1 VCE =2.0V, IC = 100mA 1.Pulse Test : Pulse Width ≤ 300µs, D.C. ≤ 2% VCE(sat) 0.5 V hFE 90 - - CLASSIFICATION hFE @VCE = 10V, I C = 2.0mA Rank Range Marking R 210-340 YR S 290-460 YS WEITRON http://www.weitron.com.tw 2/6 18-Sep-06 MSD601 SOT-23 Outline Dimension A Unit:mm SOT-23 B C TOP VIEW D E G H K J L M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 0.95 0.95 2.0 0.9 0.8 WEITRON http://www.weitron...