MSD4N60

MSD4N60 600V N-Channel MOSFET Description The MSD4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-252 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Application Low power battery chargers Switch mode power supply (SMPS) DC-AC converters. Packing & Order Information Part No./ R：2,500/Reel Part No./ T：80/Tube , 4,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter VDSS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current (TC=25°C) ID Continuous Drain Current (TC=100°C) IDM Pulsed Drain Current Value 600 ±30 4.5 2.6 18 Unit V V A A A Publication Ord...