MSD1819A-RT1

MSD1819A- RT1 General Purpose Amplifier Transistor NPN Silicon Surface Mount This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. Features  High hFE, 210 -- 460  Low VCE(sat), < 0.5 V  Moisture Sensitivity Level 1  ESD Protection: Human Body Model > 4000 V Machine Model > 400 V  These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 60 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V(BR)EBO 7.0 Vdc Collector Current -- Continuous IC 100 mAdc Collector Current -- Peak IC(P) 200 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Power Dissipation (Note 1) PD 150 mW Junction Temperature TJ 150 C Storage Temperature Range Tstg --55 to +150 C Stresses...