MSC83303
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
. . . . .
REFRACTORY/GOLD METALLIZATION EMI...
MSC83303
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
. . . . .
REFRACTORY/GOLD METALLIZATION EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC ® PACKAGE P OUT = 3.0 W MIN. WITH 7.0 dB GAIN @ 3.0 GHz
.250 2LFL (S010) hermetically sealed ORDER CODE MSC83303 BRANDING 83303
PIN CONNECTION
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DESCRIPTION The MSC83303 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an overlay, emitter site ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The MSC83303 is designed for Class C amplifier/oscillator applications in the 1.0 - 3.0 GHz frequency range. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit
1. Collector 2. Base
3. Emitter 4. Base
PDISS IC VCC TJ T STG
Power Dissipation* Device Current*
(TC ≤ 50°C)
10.0 540 30 200 − 65 to +200
W mA V °C °C
Collector-Supply
Voltage* Junction Temperature Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 12 °C/W
*Applies only to rated RF amplifier operation
September 2, 1994
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MSC83303
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVEBO BVCER I CBO hFE DYNAMIC
Symbol
I C = 1 mA I E = 1 mA I C = 5 mA VCB = 28 V VCE = 5 V
IE = 0 mA IC = 0 mA RBE = 10 Ω IC = 200 mA
45 3.5 45 — 30
— — — — —
— — — 0.5 300
V...