MSC81250M

MSC81250M NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC81250M is Designed for DME/TACAN Applications up to 1150 MHz. PACKAGE STYLE .400 2NL FLG 1 2X B C F Ø D 4 x .0 6 2 x 4 5 ° A .0 2 5 x 4 5 ° 2 3 G H I J K E FEATURES: Internal Input/Output Matching Networks PG = 6.2 dB at 250 W/1150 MHz Omnigold™ Metalization System L P M D IM A B M IN IM U M in c h e s / m m N M A X IM U M in c h e s / m m .0 2 0 / 0 .5 1 .1 0 0 / 2 .5 4 .3 7 6 / 9 .5 5 .1 1 0 / 2 .7 9 .3 9 5 / 1 0 .0 3 .1 9 3 / 4 .9 0 .4 5 0 / 1 1 .4 3 .1 2 5 / 3 .1 8 .6 4 0 / 1 6 .2 6 .8 9 0 / 2 2 .6 1 .3 9 5 / 1 0 .0 3 .0 0 4 / 0 .1 0 .0 5 2 / 1 .3 2 .1 1 8 / 3 .0 0 .0 3 0 / 0 .7 6 .3 9 6 / 1 0 .0 6 .1 3 0 / 3 .3 0 .4 0 7 / 1 0 .3 4 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θJC 17.8 A 55 V 600 W @ TC ≤ 80 °C -65 °C to +250 °C -65 °C to +200 °C 0.2 °C/W C D E F G H I J K L M N P .6 6 0 / 1 6 .7 6 .9 1 0 / 2 3 .1 1 .4 1 5 / 1 0 .5 4 .0 0 7 / 0 .1 8 .0 7 2 / 1 .8 3 .1 3 1 / 3 .3 3 .2 3 0 / 5 .8 4 1 = Collector 2 = Base 3 = Emitter CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE PG ηC POUT IC = 10 mA IC = 25 mA IE = 1.0 mA VCE = 50 V TC = 25 °C NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 65 65 3.5 25 UNITS V V V mA --dB % W VCE = 5.0 V VCC = 50 V IC = 1.0 A PIN = 250 W f = 1025 - 1150 MHz 15 6.2 40 250 6.5 38 270 120 www.DataSheet4U.com A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Spe...