MSC81035MP
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
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REFRACTORY/GOLD METALL...
MSC81035MP
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
. . . . . . . .
www.DataSheet4U.com
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 35 W MIN. WITH 10.7 dB GAIN
.280 4LSL (S051) epoxy sealed ORDER CODE MSC81035MP BRANDING 81035MP
PIN CONNECTION DESCRIPTION The MSC81035MP is a medium power Class C transistor designed specifically for pulsed L-Band avionics applications. This device is a direct replacement for the MSC1035MP. MSC81035MP offers improved saturated ouput power and collector efficiency based on the test circuit described herein. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The MSC81035MP is housed in the IMPAC™ package with internal input matching. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit
1. Collector 2. Base
3. Emitter 4. Base
PDISS IC VCC TJ T STG
Power Dissipation* Device Current*
(TC ≤ 100°C)
150 3.0 55 250 − 65 to +150
W A V °C °C
Collector-Supply
Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 1.0 °C/W
*Applies only to rated RF amplifier operation Note: Thermal Resistance determined by Infra-Red Scanning of Hot-Spot Junction Temperature at rated RF operating conditions.
October 1992
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MSC81035MP
ELECTRICAL SPECIFICATIONS (T ca...