MSC23V26457TD-XXBS8

This version: Apr.22. 1999 Semiconductor MSC23V26457TD-xxBS8 2,097,152-Word x 64-Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSC23V26457TD-xxBS8 is a 2,097,152-word x 64-bit CMOS dynamic random access memory module which is composed of eight 16Mb(2Mx8) DRAMs in TSOP packages mounted with eight decoupling capacitors. This is an 168-pin dual in-line memory module. This module supports any application where high density and large capacity of storage memory are required. FEATURES · 2,097,152-word x 64-bit organization · 168-pin Dual In-line Memory Module · Gold tab · Single 3.3V power supply, ±0.3V tolerance · Input : LVTTL compatible · Output : LVTTL compatible, 3-state · Refresh : 2048cycles/ 32ms · /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability · Fast page mode with EDO, read modify write capability · Multi-bit test mode capability · Serial Presence Detect PRODUCT FAMILY Access Time (Max.) tRAC 50ns 60ns 70ns tAA 25ns 30ns 35ns tCAC 13ns 15ns 20ns tOEA 13ns 15ns 20ns Cycle Time (Min.) 84ns 104ns 124ns Power Dissipation (Max.) Operating 2880mW 2592mW 2304mW 14.4mW Standby Family www.DataSheet4U.com MSC23V26457TD-50BS8 MSC23V26457TD-60BS8 MSC23V26457TD-70BS8 Semiconductor MSC23V26457TD MODULE OUTLINE MSC23V26457TD-xxBS8 (Unit : mm) 133.35±0.7 *1 131.35 TYP 2 - R2.0 25.40±0.12 17.78±0.1 3.0±0.1 2.70Max. 2 - φ3.0±0.1 A 1 11.43±0.05 36.83±0.05 127.35±0.05 133.35±0.12 54.61±0.05 B C 84 4.0Min. 1.27±0.1 R1.0 4.175±0.13 3.17...