www.DataSheet.co.kr
This version:
Feb. 23. 1999
Semiconductor MSC23136D/DL-xxBS10/DS10
1,048,576-word x 36-bit DYNAMI...
www.DataSheet.co.kr
This version:
Feb. 23. 1999
Semiconductor MSC23136D/DL-xxBS10/DS10
1,048,576-word x 36-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE
DESCRIPTION
The MSC23136D/DL-xxBS10/DS10 is a fully decoded, 1,048,576-word x 36-bit
CMOS dynamic random access memory module composed of eight 4Mb DRAMs in SOJ packages and two 2Mb DRAMs in SOJ packages mounted with ten decoupling
capacitors on a 72-pin glass epoxy single-inline package. This module supports any application where high density and large capacity of storage memory are required. The MSC23136DL (the low-power version) is specially designed for lower-power applications.
FEATURES
· 1,048,576-word x 36-bit organization · 72-pin socket insertable module MSC23136D/DL-xxBS10 : Gold tab MSC23136D/DL-xxDS10 : Solder tab · Single +5V supply ± 10% tolerance · Input : TTL compatible · Output : TTL compatible, 3-state · Refresh : 1024cycles/16ms (1024cycles/128ms: L-version) · /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability · Fast page mode capability · Multi-bit test mode capability
PRODUCT FAMILY
Access Time (Max.) Family tRAC MSC23136D/DL-60BS10/DS10 MSC23136D/DL-70BS10/DS10 60ns 70ns tAA 30ns 35ns tCAC 15ns 20ns
Cycle Time (Min.) Operating(Max.) Standby(Max.)
Power Dissipation
110ns 130ns
4840mW 4290mW
55mW/
9.9mW(L-version)
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
Semiconductor
MSC23136D/DL
MODULE OUTLINE
MSC23136D/DL-xxBS10/DS10
107.95±0.2*1 101.19Typ. (Unit ...