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MSA-1110 Datasheet

Part Number MSA-1110
Manufacturers Hewlett-Packard
Logo Hewlett-Packard
Description Cascadable Silicon Bipolar MMIC Amplifier
Datasheet MSA-1110 DatasheetMSA-1110 Datasheet (PDF)

Agilent MSA-1110 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Features • High Dynamic Range Cascadable 50 Ω or 75 Ω Gain Block • 3 dB Bandwidth: 50 MHz to 1.6 GHz • 17.5 dBm Typical P1 dB at 0.5 GHz • 12 dB Typical 50 Ω Gain at 0.5 GHz • 3.5 dB Typical Noise Figure at 0.5 GHz • Hermetic Gold-ceramic Microstrip Package Description The MSA-1110 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic high reliability package. This MMIC is d.

  MSA-1110   MSA-1110






Cascadable Silicon Bipolar MMIC Amplifier

Agilent MSA-1110 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Features • High Dynamic Range Cascadable 50 Ω or 75 Ω Gain Block • 3 dB Bandwidth: 50 MHz to 1.6 GHz • 17.5 dBm Typical P1 dB at 0.5 GHz • 12 dB Typical 50 Ω Gain at 0.5 GHz • 3.5 dB Typical Noise Figure at 0.5 GHz • Hermetic Gold-ceramic Microstrip Package Description The MSA-1110 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic high reliability package. This MMIC is designed for high dynamic range in either 50 or 75 Ω systems by combining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifiers in industrial and military systems. The MSA-series is fabricated using Agilent’s 10 GHz fT, 25 GHz fMAX silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 100 mil Package Typical Biasing Configuration R bias VCC > 8 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 5.5 V 2 2 MSA-1110 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 90 mA 560 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2, 4]: θjc = 135°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TC.


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