MSA-0485

Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0485 Features Cascadable 50 Ω Gain Block 3 dB Bandwidth: DC to 3.6 GHz 8.0 dB Typical Gain at 1.0␣ GHz 12.5 dBm Typical P1 dB at 1.0␣ GHz Unconditionally Stable (k>1) Low Cost Plastic Package plastic package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 85 Plastic Package Description The MSA-0485 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 5.25 V 2 5965-9577E 6-338 MSA-0485 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 85 mA 500 mW +13 dBm 150°C –65 to 150°C Thermal Resistance[2,4]: θjc = 90°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 11.1 mW/°C for TC > 105°C. 4. See MEASUREMENTS section “Thermal Resi...