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MSA-0470 Datasheet

Part Number MSA-0470
Manufacturers Hewlett-Packard
Logo Hewlett-Packard
Description Cascadable Silicon Bipolar MMIC Amplifier
Datasheet MSA-0470 DatasheetMSA-0470 Datasheet (PDF)

Agilent MSA-0470 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 4.0 GHz Description The MSA-0470 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fa.

  MSA-0470   MSA-0470






Cascadable Silicon Bipolar MMIC Amplifier

Agilent MSA-0470 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 4.0 GHz Description The MSA-0470 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using Agilent’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 70 mil Package • 12.5 dBm Typical P1 dB at 1.0 GHz • 8.5 dB Typical Gain at 1.0 GHz • Unconditionally Stable (k>1) • Hermetic Gold-ceramic Microstrip Package Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 5.25 V 2 2 MSA-0470 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 100 mA 650 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,4]: θjc = 115°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 8.7 mW/°C for TC > 125°C. 4. The small spot size of this te.


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